2SA844 transistor (pnp) features power dissipation p cm : 0.3 w (tamb=25 ) collector current i cm: -0.1 a collector-base voltage v (br)cbo : -55 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -10 a , i e =0 -55 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -55 v emitter-base breakdown voltage v(br) ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -18v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -2 v , i c =0 -0.05 a dc current gain h fe v ce =-12v, i c = -2ma 160 800 collector-emitter saturation voltage v ce(sat) i c = -10ma, i b = -1 ma -0.5 v base-emitter voltage v be(on) v ce = -12v, i c = -2ma -0.75 v transition frequency f t v ce =-12v, i c = -2ma 150 mhz classification of h fe rank c d e range 160-320 250-500 400-800 1 2 3 to-92 1. emitter 2. collector 3. base 2SA844 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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